IRFU220B

200V N-Channel MOSFET

ON Semiconductor

IRFU220B Features

* 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V

* Low gate charge ( typical 12 nC)

* Low Crss ( typical 10 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D D ! GS D-PAK IRFR Series GDS I-PAK IRFU Series Absolute Maximum Ratin

IRFU220B General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

IRFU220B Datasheet (536.65 KB)