isc N-Channel Mosfet Transistor INCHANGE Semicond.
International Rectifier
IRF530N - Power MOSFET
PD - 91351 IRF530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tempera.
International Rectifier
IRF5305 - Power MOSFET
PD - 91385B IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-C.
Inchange Semiconductor
IRF530 - N-Channel MOSFET Transistor
isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF530 FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge.
INCHANGE
IRF5305S - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology .
International Rectifier
IRF5305S - Power MOSFET
PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat.
Inchange Semiconductor
IRF530FI - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF530FI ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate fo.
STMicroelectronics
IRF530 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICA.
Fairchild Semiconductor
IRF530 - N-Channel Power MOSFET
Data Sheet IRF530 February 2002 [ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 1.
International Rectifier
IRF5305L - Power MOSFET
PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat.
Fairchild Semiconductor
IRF530A - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
STMicroelectronics
IRF530FP - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.16 Ω ID 10 A s s TYPICAL RDS(on) = .
International Rectifier
IRF530L - Power MOSFET
PD - 91352A IRF530NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175.
NXP
IRF530N - N-channel TrenchMOS transistor
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES • ’Trench’ technology • Low on-state resistance • Fa.
Intersil Corporation
IRF530N - N-Channel Power MOSFET
IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Featur.
International Rectifier
IRF530NS - Power MOSFET
PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l .
