IRF530 Datasheet | Specifications & PDF Download

Data Sheet IRF530 February 2002 [ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 1

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PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l

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www.vishay.com IRF530 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF530FI ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate fo

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF530 FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge

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PD - 91385B IRF5305 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-C

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IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.16 Ω ID 10 A s s TYPICAL RDS(on) =

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PD - 91351 IRF530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tempera

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PD - 94931 IRF530PbF • Lead-Free www.irf.com 1 1/8/04 IRF530PbF 2 www.irf.com IRF530PbF www.irf.com 3 IRF530PbF 4 www.irf.com IRF530PbF

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PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

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IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to

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Isc N-Channel MOSFET Transistor IRF530NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICA

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PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operat

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