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STH60N10 Datasheet - ST Microelectronics

STH60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 s s s s s s s s V DSS 100 V 100 V 100 V R DS( on) < 0.025 Ω < 0.025 Ω < 0.025 Ω ID 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 3 2 TO-218 1 ISOWATT218 1 APPLICATIONS HIGH CU.

STH60N10 Datasheet (246.12 KB)

Preview of STH60N10 PDF

Datasheet Details

Part number:

STH60N10

Manufacturer:

STMicroelectronics ↗

File Size:

246.12 KB

Description:

N - channel enhancement mode power mos transistor.

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STH60N10 CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST Microelectronics

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