STP80N70F6
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
Key Features
- Order code STP80N70F6 VDSS max. 68 V RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W (VGS= 10 V)
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge TAB 3 2 1 TO-220
