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STP80N70F6 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Order code STP80N70F6 VDSS max. 68 V RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W (VGS= 10 V).
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.
  • Very low switching gate charge TAB 3 2 1 TO-220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP80N70F6 N-channel 68 V, 0.0063 Ω typ., 96 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 package Datasheet − production data Features Order code STP80N70F6 VDSS max. 68 V RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W (VGS= 10 V) ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge TAB 3 2 1 TO-220 Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Table 1.