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STP80N06-10 Datasheet - ST Microelectronics

STP80N06-10 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP80N06-10 s s s s s s s V DSS 60 V R DS(on) < 0.010 Ω ID 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s PWM MOTOR CONTROL s DC-DC & DC-AC CONVERTER s SYNCROUNOUS RECTIFICATION .

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Datasheet Details

Part number:

STP80N06-10

Manufacturer:

STMicroelectronics ↗

File Size:

77.17 KB

Description:

N - channel enhancement mode ultra high density power mos transistor.

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STP80N06-10 STP80N06-10 CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ST Microelectronics

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