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STP80N03L-06 Datasheet - ST Microelectronics

STP80N03L-06 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE STP80N03L-06 s s s s s s s s V DSS 30 V R DS(on) < 0.006 Ω ID 80 A ( ) TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 3 1 2 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC .

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Datasheet Details

Part number:

STP80N03L-06

Manufacturer:

STMicroelectronics ↗

File Size:

77.69 KB

Description:

N - channel enhancement mode ultra high density power mos transistor.

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STP80N03L-06 STP80N03L-06 CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ST Microelectronics

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