STP80N6F6

Automotive-grade N-channel Power MOSFET

STMicroelectronics

STP80N6F6 Features

* TAB 3 2 1 TO-220 Order code STP80N6F6 VDS 60 V RDS(on) max. ID 5 mΩ (1) 80 A 1. Current limited by package

* Designed for automotive applications and AEC-Q101 qualified

* Low gate charge

* Very low on-resistance

* High avalanche ruggedness Figure 1. Internal s

STP80N6F6 General Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate
* structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STP80N6F6 Table 1. Device summary Marking Packa.

STP80N6F6 Datasheet (288.15 KB)

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STP80N6F6

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STMicroelectronics ↗

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288.15 KB

Description:

Automotive-grade n-channel power mosfet.
STP80N6F6 Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Fea.

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STP80N6F6 Automotive-grade N-channel Power MOSFET STMicroelectronics

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STP80N6F6 Features

STP80N6F6 General Description

Datasheet Details

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