STP80N10F7

N-Channel Power MOSFET

STMicroelectronics

STP80N10F7 Features

* Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W

* Extremely low gate charge

* Ultra low on-resistance

* Low gate input resistance Figure 1. Internal sch

STP80N10F7 General Description

th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. '3$.72DQG 72)3QR7$% +3$. $0Y Order codes STD80N10F7 STF80N10F7 STH80N10F.

STP80N10F7 Datasheet (695.79 KB)

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STP80N10F7

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STMicroelectronics ↗

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695.79 KB

Description:

N-channel power mosfet.
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™ 2 Power MOSFETs in DPAK, TO-220FP, H PAK-.

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STP80N10F7 N-Channel Power MOSFET STMicroelectronics

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STP80N10F7 Features

STP80N10F7 General Description

Datasheet Details

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