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STP80N10F7 - N-Channel Power MOSFET

STP80N10F7 Description

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™ 2 Power MOSFETs in DPAK, TO-220FP, H PAK-.
th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

STP80N10F7 Features

* Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W
* Extremely low gate charge
* Ultra low on-resistance
* Low gate input resistance Figure 1. Internal sch

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N-Channel Power MOSFET STMicroelectronics
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