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STP80N1K1K6 Datasheet - STMicroelectronics

STP80N1K1K6 N-Channel Power MOSFET

AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior p.

STP80N1K1K6 Features

* TAB Order code VDS RDS(on) max. ID STP80N1K1K6 800 V 1.1 mΩ 5A TO-220 1 23 D(2, TAB)

* Worldwide best RDS(on) x area

* Worldwide best FOM (figure of merit)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected Applications G(1)

STP80N1K1K6-STMicroelectronics.pdf

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Datasheet Details

Part number:

STP80N1K1K6

Manufacturer:

STMicroelectronics ↗

File Size:

359.20 KB

Description:

N-channel power mosfet.

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STP80N1K1K6 STP80N1K1K6 N-Channel Power MOSFET STMicroelectronics

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