STP80N1K1K6 - N-Channel Power MOSFET
AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology.
The result is the best-in-class on-resistance per area and gate charge for applications requiring superior p
STP80N1K1K6 Features
* TAB Order code VDS RDS(on) max. ID STP80N1K1K6 800 V 1.1 mΩ 5A TO-220 1 23 D(2, TAB)
* Worldwide best RDS(on) x area
* Worldwide best FOM (figure of merit)
* Ultra low gate charge
* 100% avalanche tested
* Zener-protected Applications G(1)
