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STP80N05-09 Datasheet - ST Microelectronics

STP80N05-09 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE STP80N05-09 s s s s s s VDS S 50 V RDS(o n) < 0.009 Ω ID 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE 1 2 3 APPLICATIONS s SYNCROUNOUS RECTIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-DC & DC-AC CONVERTER ABSOLUTE MAXIMUM RATINGS TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS.

STP80N05-09 Datasheet (114.77 KB)

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Datasheet Details

Part number:

STP80N05-09

Manufacturer:

STMicroelectronics ↗

File Size:

114.77 KB

Description:

N - channel enhancement mode ultra high density power mos transistor.

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STP80N05-09 CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR ST Microelectronics

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