STP80N20M5 - Power MOSFET
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
The resulting product has extremely low onresistance, which is unmatched among siliconbased P
STP80N20M5 Features
* Type STB80N20M5 STP80N20M5
* VDSS @ TJmax 200 V RDS(on) max < 0.023 Ω ID 61 A 61 A 3 1 1 2 3 Amongst the best RDS(on)
* area High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested D2PAK TO-220 Application Switching application
