FLM5964-4F
Key Features
- High Output Power: P1dB = 36.5dBm (Typ.)
- High Gain: G1dB =10.0dB (Typ.)
- High PAE: hadd = 37% (Typ.)
- Broad Band: 5.9 to 6.4GHz
- Impedance Matched Zin/Zout = 50ohm
- Part: FLM5964-4F
- Description: C-Band Internally Matched FET
- Manufacturer: SUMITOMO
- Size: 384.12 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| FLM5964-4F | Fujitsu Semiconductor Limited | C-Band Internally Matched FET |
| FLM5964-4F | Eudyna Devices | C-Band Internally Matched FET |
| FLM5964-45F | Eudyna Devices | C-Band Internally Matched FET |
| FLM5964-35F | Eudyna Devices | C-Band Internally Matched FET |
| FLM5964-8F | Eudyna Devices | C-Band Internally Matched FET |
| FLM5964-6F | Eudyna Devices | C-Band Internally Matched FET |
| FLM5964-25F | Fujitsu Semiconductor Limited | C-Band Internally Matched FET |
| FLM5964-35DA | Fujitsu Semiconductor Limited | Internally Matched Power GaAs FETs |
| FLM5964-6D | Fujitsu Semiconductor Limited | Internally Matched Power GaAs FETs |
| FLM5964-6F | Fujitsu Semiconductor Limited | C-Band Internally Matched FET |