FLM5964-8F
Key Features
- High Output Power: P1dB = 39.5dBm (Typ.)
- High Gain: G1dB = 10.0dB (Typ.)
- High PAE: hadd = 37% (Typ.)
- Broad Band: 5.9 to 6.4GHz
- Impedance Matched Zin/Zout = 50ohm
- Part: FLM5964-8F
- Description: C-Band Internally Matched FET
- Manufacturer: SUMITOMO
- Size: 380.89 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| FLM5964-8F | Fujitsu Semiconductor Limited | C-Band Internally Matched FET |
| FLM5964-8F | Eudyna Devices | C-Band Internally Matched FET |
| FLM5964-18F | Fujitsu Semiconductor Limited | C-Band Internally Matched FET |
| FLM5964-18DA | Fujitsu Semiconductor Limited | Internally Matched Power GaAs FETs |
| FLM5964-12F | Eudyna Devices | Internally Matched FET |
| FLM5964-12F | Fujitsu Semiconductor Limited | C-Band Internally Matched FET |
| FLM5964-12DA | Fujitsu Semiconductor Limited | Internally Matched Power GaAs FETs |
| FLM5964-25DA | Fujitsu Semiconductor Limited | Internally Matched Power GaAs FETs |
| FLM5964-18F | Eudyna Devices | C-Band Internally Matched FET |
| FLM5964-25F | Eudyna Devices | C-Band Internally Matched FET |