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SamHop Microelectronics

STB820S Datasheet Preview

STB820S Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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STB820S
Sa mHop Microelectronics C orp.
STP820SGreen
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
15 @ VGS=10V
75V 54A
18 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
75
±20
ID
Drain Current-Continuous c
TC=25°C
TC=70°C
54
45
IDM -Pulsed a c
159
EAS Single Pulse Avalanche Energy d
121
TC=25°C
PD
Maximum Power Dissipation
TC=70°C
100
70
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.5
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,08,2015
www.samhop.com.tw




SamHop Microelectronics

STB820S Datasheet Preview

STB820S Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STB820S
STP820S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS=0V , ID=250uA
VDS=60V , VGS=0V
VGS= ±20V , VDS=0V
75
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=27A
VGS=4.5V , ID=25A
VDS=10V , ID=27A
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On DelayTime
tr Rise Time
tD(OFF)
Turn-Off DelayTime
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=37.5V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=37.5V,ID=26A,VGS=10V
VDS=37.5V,ID=26A,VGS=4.5V
VDS=37.5V,ID=26A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS=6A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 40V.
e.Mounted on FR4 Board of 1 inch2 , 2oz.
1.0
Typ
1.8
15
18
48
1152
182
122
15
30
51
19
18.5
11
1.8
6.5
0.77
Max Units
1
±100
V
uA
nA
3.0 V
19 m ohm
24 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.3 V
Jun,08,2015
2 www.samhop.com.tw


Part Number STB820S
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 10 Pages
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