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STB820S - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S.

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Datasheet Details

Part number STB820S
Manufacturer SamHop Microelectronics
File Size 134.23 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription

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STB820S Sa mHop Microelectronics C orp. STP820SGreen Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 15 @ VGS=10V 75V 54A 18 @ VGS=4.5V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
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