• Part: KM736V795
  • Description: 128Kx36 Synchronous SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 321.68 KB
KM736V795 Datasheet (PDF) Download
Samsung Semiconductor
KM736V795

Description

The KM736V795 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; GW, BW, LBO, ZZ.

Key Features

  • Synchronous Operation
  • 2 Stage Pipelined operation with 4 Burst
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V+0.3V/-0.165V Power Supply
  • I/O Supply Voltage 2.5V+0.4V/-0.13V
  • 5V Tolerant Inputs Except I/O Pins
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal