Overview: KM736V795
Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History
Rev. No.
0.0 0.1 History
Initial draft Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change Input/output leackage currant from ±1µA to ±2µA Modify Read timing & Power down cycle timing. Change ISB2 value from 30mA to 20mA. Remove DC characteristics ISB1 - L ver.& ISB2 - L ver . Remove Low power version. Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V((pulse width≤tCYC/2) Change VIN max from 5.5V to VDD+0.5V Draft Date
February. 02. 1998 February. 12. 1998 Remark
Preliminary Preliminary 0.2 April. 14. 1998 Preliminary 0.3 May. 13. 1998 Change ISB2 value from 20mA to 30mA. Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V. Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. Final spec Release May. 14. 1998 Preliminary 0.4 Preliminary 1.0 May. 15. 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- May. 1998 Rev 1.0 www.DataSheet.
