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K4S643232E Datasheet, Samsung semiconductor

K4S643232E Datasheet, Samsung semiconductor

K4S643232E

datasheet Download (Size : 102.47KB)

K4S643232E Datasheet

K4S643232E lvttl(3.3v) equivalent, 2m x 32 sdram 512k x 32bit x 4 banks synchronous dram lvttl(3.3v).

K4S643232E

datasheet Download (Size : 102.47KB)

K4S643232E Datasheet

Features and benefits


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* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Bur.

Application


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* ORDERING INFORMATION Part NO. K4S643232E-TC/L45 K4S643232E-TC/L50 K4S643232E-TC/L55 K4S.

Description

The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clo.

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TAGS

K4S643232E
SDRAM
512K
32bit
Banks
Synchronous
DRAM
LVTTL3.3V
Samsung semiconductor

Manufacturer


Samsung semiconductor

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