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KM736V887 - 256Kx36 & 512Kx18 Synchronous SRAM

Download the KM736V887 datasheet PDF. This datasheet also covers the KM718V987 variant, as both devices belong to the same 256kx36 & 512kx18 synchronous sram family and are provided as variant models within a single manufacturer datasheet.

Description

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

  • Synchronous Operation.
  • On-Chip Address Counter.
  • Self-Timed Write Cycle.
  • On-Chip Address and Control Registers.
  • 3.3V+0.165V/-0.165V Power Supply.
  • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • 5V Tolerant Inputs Except I/O Pins.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • Power Down State via ZZ Signal.
  • LBO Pin allows.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM718V987_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM736V687 64Kx36-Bit Synchronous Burst SRAM
KM736V687A 64Kx36-Bit Synchronous Burst SRAM
KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V747 128Kx36 & 256Kx18 Flow-Through NtRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KM736V887 KM718V987 Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC Characteristics. ISB value from 60mA to 90mA at -8 ISB value from 50mA to 80mA at -9 ISB value from 40mA to 70mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13.0ns to 12.0ns at -10 3. Changed DC condition at Icc and parameters ICC ; from 300mA to 350mA at -8, from 260mA to 300mA at -9, from 220mA to 260mA at -10, ISB ; from 90mA to 130mA at -8, from 80mA to 120mA at -9, from 70mA to 110mA at -10, 1. ADD 119BGA(7x17 Ball Grid Array Package) . 2. ADD x32 organization. Add VDDQ Supply voltage( 2.5V ) Changed VOL Max value from 0.
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