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KM736V887 Datasheet, Samsung semiconductor

KM736V887 Datasheet, Samsung semiconductor

KM736V887

datasheet Download (Size : 574.50KB)

KM736V887 Datasheet

KM736V887 sram

(km736v887 / km718v987) 256kx36 & 512kx18 synchronous sram.

KM736V887

datasheet Download (Size : 574.50KB)

KM736V887 Datasheet

KM736V887 Features and benefits

KM736V887 Features and benefits


* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* 3.3V+0.165V/-0.165V Power Sup.

KM736V887 Application

KM736V887 Application

GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each b.

KM736V887 Description

KM736V887 Description

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and.

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KM736V887 Page 1 KM736V887 Page 2 KM736V887 Page 3

TAGS

KM736V887
KM736V887
KM718V987
256Kx36
512Kx18
Synchronous
SRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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