KM736V989 - 512Kx36 & 1Mx18 Synchronous SRAM

Samsung semiconductor

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Datasheet Details

Part number: KM736V989
Manufacturer: Samsung semiconductor
File Size: 536.55 KB
Datasheet: KM736V989_Samsungsemiconductor.pdf
Description: 512Kx36 & 1Mx18 Synchronous SRAM

KM736V989 Product details

Description

The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System..

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V +0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V +0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.

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512Kx36 1Mx18 Synchronous SRAM Samsung semiconductor

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