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SW040R03VLT - N-channel Enhanced mode TO-252 MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V.
  • Low Gate Charge (Typ 59nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW040R03VLT
Manufacturer Samwin
File Size 539.31 KB
Description N-channel Enhanced mode TO-252 MOSFET
Datasheet download datasheet SW040R03VLT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW040R03VLT N-channel Enhanced mode TO-252 MOSFET Features ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 5.1mΩ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10V ⚫ Low Gate Charge (Typ 59nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested ⚫ Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-252 12 3 1. Gate 2.Drain 3.Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 30V ID : 100A RDS(ON) : 5.1mΩ@VGS=4.5V 3.
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