pnp/npn epitaxial planar silicon transistors.
* Adoption of FBET process.
* High breakdown voltage.
* Excellent linearity of hFE and small Cob.
* Fast swtching speed.
Package Dimensions
unit:mm 2006B.
Features
* Adoption of FBET process.
* High breakdown voltage.
* Excellent linearity of hFE and small Cob. <.
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