* Low-saturation collector-to-emitter voltage : VCE(sat)=
* 0.5V (PNP), 0.4V (NPN) max.
* Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010C [2SB826/2SD1062] ( ) : 2SB826 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Ba
2SD1062
Sanyo Semicon Device
102.00 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:723H PNP/NPN Epitaxial Planar Silicon Transistors 2SB826/2SD1062 50V/12A Switching Applications Applications Relay drivers, hi.
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