* Low collector-to-emitter saturation voltage : VCE(sat)=(
* )0.4V max.
* Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base
2SD1063
Sanyo Semicon Device
100.34 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Universal high c.
📁 Related Datasheet
2SD1060 NPN Transistor (INCHANGE)
2SD1060 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD1060 NPN EPITAXIAL PLANAR SILICON TRANSISTOR (UTC)
2SD1060 SILICON POWER TRANSISTOR (SavantIC)
2SD1060 Bipolar Transistor (ON Semiconductor)
2SD1061 NPN Transistor (INCHANGE)
2SD1061 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD1061 SILICON POWER TRANSISTOR (SavantIC)
2SD1062 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD1062 NPN Transistor (INCHANGE)
