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BSS145 Datasheet

SIPMOS Small-Signal Transistor

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BSS 145
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
VGS(th) = 1.4 ...2.3 V
Pin 1
G
Pin 2
S
Pin 3
D
Type
BSS 145
Type
BSS 145
VDS
65 V
ID
0.22 A
Ordering Code
Q67000-S132
RDS(on)
3.5
Package
SOT-23
Tape and Reel Information
E6327
Marking
SBs
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 31 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
65
65
± 14
± 20
0.22
0.88
0.36
Unit
V
A
W
Semiconductor Group
1
Sep-13-1996



Siemens Electronic Components Datasheet

BSS145 Datasheet

SIPMOS Small-Signal Transistor

No Preview Available !

BSS 145
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip to ambient air
RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Values
Unit
-55 ... + 150 °C
-55 ... + 150
350
K/W
285
E
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
65 -
-
Gate threshold voltage
VGS(th)
VGS=VDS, ID = 1 mA
1.4 2
2.3
Zero gate voltage drain current
IDSS
VDS = 65 V, VGS = 0 V, Tj = 25 °C
- 0.1 0.5
VDS = 65 V, VGS = 0 V, Tj = 125 °C
- 8 50
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
- 10 100
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.2 A
- 1.6 3.5
VGS = 3.5 V, ID = 0.02 A
--
6.5
Unit
V
µA
nA
Semiconductor Group
2
Sep-13-1996


Part Number BSS145
Description SIPMOS Small-Signal Transistor
Maker Siemens Semiconductor
Total Page 8 Pages
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