CFY77-10 is AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| CFY77-08 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
| CFY77 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Datasheet.
