CFY77-10
CFY77-10 is AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) manufactured by Siemens Semiconductor Group.
Features
- Very low noise
- Very high gain
- For low noise front end amplifiers up to 20 GHz
- For DBS down converters
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package 1)
CFY77-08 CFY77-10
HG HH
Q62702-F1549 Q62702-F1559
MW-4 MW-4
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Thermal resistance Channel-soldering point source
1) Dimensions see chapter Package Outlines 2) TS: Temperature measured at soldering point
Symbol
Unit 3.5 4.5 -3.0 60 150 -65...+150 180 V V V m A °C °C m W
VDS VDG VGS ID TCh Tstg Ptot
Rth Ch S
K/W
Siemens Aktiengesellschaft pg. 1/4
11.01.1996 HL EH PD 21
Al Ga As / In Ga As HEMT
CFY 77
Electrical characteristics at TA = 25°C unless otherwise specified
Characteristics Drain-source saturation current
VDS = 2 V VDS = 2 V VDS = 2 V VDS = 2 V VGS = 0 V ID = 1 m A ID = 15 m A ID = 15 m A ID = 15 m A f = 12 GHz
Symbol min 15 -2 50 typ 30 -0.7 0.05 65 max 60 -0.2 2
- Unit m A V µA m S d B
IDSS VGS(P) IG gm F
Pinch-off voltage Gate leakage current Transconductance Noise figure
VDS = 2 V
CFY77-08 CFY77-10 Associated gain
VDS = 2 V ID = 15 m A f = 12 GHz
- 0.7 0.9
0.8 1 d...
