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CFY77-10 Datasheet AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview

AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________.

Key Features

  • Very low noise.
  • Very high gain.
  • For low noise front end amplifiers up to 20 GHz.
  • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 CFY77-10 HG HH Q62702-F1549 Q62702-F1559 MW-4 MW-4 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Therm.