• Part: CFY77-10
  • Description: AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
  • Manufacturer: Siemens Semiconductor Group
  • Size: 27.29 KB
Download CFY77-10 Datasheet PDF
CFY77-10 datasheet preview
CFY77-10 page 2
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CFY77-10 page 3
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CFY77-10 Key Features

  • Very low noise
  • Very high gain
  • For low noise front end amplifiers up to 20 GHz
  • For DBS down converters
  • Unit mA V µA mS dB
  • 0.7 0.9
  • CFY77-08 CFY77-10

Related Siemens Semiconductor Group Datasheets

Part Number Description
CFY77-08 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
CFY77 AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
CFY25 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)