CFY77-10 - AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)

Product Overview

Siemens Semiconductor Group

Part number	CFY77-10
Manufacturer	Siemens Semiconductor Group
File Size	27.29 KB
Description	AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
Datasheet	CFY77-10 Datasheet
Additional preview pages of the CFY77-10 datasheet.

Very low noise.
Very high gain.
For low noise front end amplifiers up to 20 GHz.
For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 CFY77-10 HG HH Q62702-F1549 Q62702-F1559 MW-4 MW-4 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 51°C) 2) Therm.

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Other Datasheets by Siemens Semiconductor Group

CFY77-08 - AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
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Published: Mar 23, 2005 |