T431616D - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

TMT

T431616D 1m x 16 sdram 512k x 16bit x 2banks synchronous dram by TMT - Datasheet Preview

Datasheet Details

Part number	T431616D
Manufacturer	TMT
File Size	759.46 KB
Description	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Datasheet	T431616D Datasheet

General Description

The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits.

It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits.

Overview

tm TE CH T431616D/E SDRAM.

Key Features

Fast access time: 5/6/7 ns.
Fast clock rate: 200/166/143 MHz.
Self refresh mode: standard and low power.
Internal pipelined architecture.
512K word x 16-bit x 2-bank.
Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function.
Individual byte controlled by LDQM and UDQM.
Auto Refresh and Self Refresh.
4096 refresh cycles/64ms.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	T431616A	1M x 16 SDRAM	TM

More Datasheets from TMT

Part Number	Description
T431616B	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616E	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM