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TSM3457 - 30V P-Channel MOSFET

Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance Ordering Information Part No. Package Packing TSM3457CX6 RFG SOT-26 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain.

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Datasheet Details

Part number TSM3457
Manufacturer Taiwan Semiconductor Company
File Size 204.81 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet TSM3457 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM3457 30V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 60 100 Qg 9.52 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Ordering Information Part No.