TSM4N60 - 600V N-Channel Power MOSFET

Taiwan Semiconductor Company

Datasheet Details

Part number	TSM4N60
Manufacturer	Taiwan Semiconductor ↗ Company
File Size	329.72 KB
Description	600V N-Channel Power MOSFET
Datasheet	TSM4N60_TaiwanSemiconductorCompany.pdf

The TSM4N60 is produced using advanced planar stripe, DMOS technology.

Robust high voltage termination.
Avalanche energy specified.
Diode is characterized for use in bridge circuits.
Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. Package TSM4N60CZ C0 TO-220 TSM4N60CZ C0G TO-220 TSM4N60CI C0 ITO-220 TSM4N60CI C0G ITO-220 TSM4N60CH C5 TO-251 TSM4N60CH C5G TO-251 TSM4N.

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Published: Mar 5, 2010 |