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TSM4N60 - 600V N-Channel Power MOSFET

General Description

The TSM4N60 is produced using advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • Robust high voltage termination.
  • Avalanche energy specified.
  • Diode is characterized for use in bridge circuits.
  • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. Package TSM4N60CZ C0 TO-220 TSM4N60CZ C0G TO-220 TSM4N60CI C0 ITO-220 TSM4N60CI C0G ITO-220 TSM4N60CH C5 TO-251 TSM4N60CH C5G TO-251 TSM4N.

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Datasheet Details

Part number TSM4N60
Manufacturer Taiwan Semiconductor Company
File Size 329.72 KB
Description 600V N-Channel Power MOSFET
Datasheet download datasheet TSM4N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 2.5 @ VGS =10V ID (A) 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts base on half bridge topology. Features ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a discrete fast recovery diode.