2N3791 Datasheet, Toshiba

2N3791 transistor equivalent, silicon pnp transistor.

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Features and benefits

. High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat)=-1.0V (Max.) @ IC=-5A, Ib=-0.5A Unit in mm 025.OUAX. MA.

Application

FEATURES . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat.

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