2N3792 Datasheet, Toshiba

2N3792 transistor equivalent, silicon pnp transistor.

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Features and benefits

. High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, Ic=-3A Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ IC=-5A, I B=-0.5A Unit in irnn MAXIMUM RATI.

Application

FEATURES . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, Ic=-3A Low Saturation Voltage: VCE(sat)=.

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