2SB676
2SB676 is Silicon PNP Transistor manufactured by Toshiba.
FEATURES
- High DC Current Gain : h FE=2000 (Min.) (v CE=-2V, I C=-1A)
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX., 03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc-25°C) Junction Temperature
Storage Temperature Range EQUIVALENT CIRCUIT
BASEO-
SYMBOL RATING UNIT
VCBO
-100
V v CEO
-80
V v EBO
-5
V ic
-4
?C
Tj
°C
1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER
Tst S
-55M.50
°C
COLLECTOR c
^3oon
VAr-
JBDEC EIAJ
TO 220AB
TOSHIBA
Mounting Kit No. AC75 Weight : 1.9g
ELECTRICAL CHARACTERISTICS (Ta=25°c)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltaee Base-Emitter Saturation...
