2SB676 transistor equivalent, silicon pnp transistor.
* High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A)
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX., 03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
* High DC Current Gain : hFE=2.
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