2SD1052A transistor equivalent, silicon npn transistor.
: . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX.) at Ic=lA, IB =0.02A . Collector Power Dissipation of 30V at Tc=25°C
Unit in m.
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FEATURES : . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX.) at Ic=lA, IB =0.0.
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