HN4A06J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO =
- 120V z High h FE : h FE = 200 to 700 z Excellent h FE linearity
: h FE (IC =
- 0.1m A) / h FE (IC =
- 2m A) = 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 120
Collector-emitter voltage
VCEO
- 120
Emitter-base voltage
VEBO
- 5
Collector current Base current Collector power dissipation Junction temperature
- 100 m A
- 20 m A
PC-
300 m W
Tj
°C
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)...
