HN4A06J Toshiba (https://www.toshiba.com/) Silicon PNP Epitaxial Type Transistor

Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J HN4A06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VC...
Features n if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3L1A Weight: 0.014g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabilit...

Datasheet PDF File HN4A06J Datasheet 313.22KB

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