Datasheet Details
| Part number | TH58BVG2S3HBAI4 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 690.29 KB |
| Description | 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| Datasheet | TH58BVG2S3HBAI4-Toshiba.pdf |
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Overview: TH58BVG2S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M 8 BIT) CMOS NAND.
| Part number | TH58BVG2S3HBAI4 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 690.29 KB |
| Description | 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| Datasheet | TH58BVG2S3HBAI4-Toshiba.pdf |
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|
The TH58BVG2S3HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 64) bytes 64 pages 4096 blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes 4 Kbytes: 2112 bytes 64 pages).
| Part Number | Description |
|---|---|
| TH58BVG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HBAI6 | 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HTA00 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BVG3S0HTAI0 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58BYG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58NVG2S3BTG00 | 4-Gbit CMOS NAND EPROM |
| TH58NVG3D4BTG00 | 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM |
| TH58NVG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58NVG3S0HBAI6 | 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM |
| TH58NVG3S0HTA00 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM |