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TTC014 Datasheet - Toshiba

TTC014 NPN Transistor

TTC014 Features

* (1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 µs (typ.), tf = 0.4 µs (typ.) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC014 1. Base 2. Collector (Heatsink) 3. Emitter New P

TTC014-Toshiba.pdf

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Datasheet Details

Part number:

TTC014

Manufacturer:

Toshiba ↗

File Size:

175.90 KB

Description:

Npn transistor.

TTC014 Distributor

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TTC014 TTC014 NPN Transistor Toshiba