TTC014 - NPN Transistor

Toshiba

Datasheet Details

(1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 µs (typ. ), tf = 0.4 µs (typ. ) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC014 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCES 900 C.

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Published: Jun 2, 2015 |