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Toshiba Electronic Components Datasheet

2SK3670 Datasheet

Silicon N-Channel MOS Type Chopper Regulator and DC-DC Converter Applications

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2SK3670
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3670
Chopper Regulator and DCDC Converter Applications
z 2.5V-Gate Drive
z Low drain-source ON resistance: RDS (ON) = 1.0 (typ.)
z High forward transfer admittance: |Yfs| = 2.1 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 150 V)
www.DataSheetz4U.cEonmhancement mode: Vth = 0.5~1.3 V (VDS = 10 V, ID =200μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
DC (Note 1)
Drain current
Pulse(t5s)
(Note 1)
Pulse
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAS
Tch
Tstg
Rating
150
150
±12
0.67
1
3
0.9
41
0.67
0.09
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
138 °C / W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDS = 50VTch = 25(initial)L = 135mHIAR = 0.67ARG = 25Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
1 2007-07-24


Toshiba Electronic Components Datasheet

2SK3670 Datasheet

Silicon N-Channel MOS Type Chopper Regulator and DC-DC Converter Applications

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SK3670
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
www.DataSheet4U.com
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±9.6 V, VDS = 0 V
VDS = 150 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID =200μA
VGS = 2.5 V, ID = 0.5 A
VGS = 4 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
— — ±10
— — 100
150 —
0.5 — 1.3
— 1.1
2
— 1.0 1.7
1.0 2.1
— 230 —
— 14 —
— 50 —
μA
μA
V
V
S
pF
Rise time
Switching time
Turnon time
Fall time
tr 5 V
VGS
ID = 0.5 A OUT
— 16 —
0V
ton
50 Ω
— 40 —
RL=150 Ω
ns
tf — 23 —
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Duty <= 1%, tw = 10 μs
VDD75 V
Qg
Qgs VDD 120 V, VGS = 5 V, ID = 1 A
Qgd
— 95 —
— 4.6 —
— 2.9 — nC
— 1.7 —
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current (t=5s)
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 0.5 A, VGS = 0 V
IDR = 1A, VGS = 0V
dIDR / dt = 50A /μs
Min Typ. Max Unit
— — 0.67 A
—— 1 A
—— 3 A
1.5
V
— 95 — ns
— 110 —
nC
Marking
K3670
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free
2
2007-07-24


Part Number 2SK3670
Description Silicon N-Channel MOS Type Chopper Regulator and DC-DC Converter Applications
Maker Toshiba Semiconductor
Total Page 3 Pages
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