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GT8G131 - Silicon N-Channel MOSFET

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GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm · · · · · Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 8 150 1.1 150 -55~150 2 Unit V V Collector current A W °C °C Collector power dissipation (Note 1) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-6J1C Note 1: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t] Weight: 0.080 g (typ.
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