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Vishay Intertechnology Electronic Components Datasheet

VBT1060C-M3 Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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www.vishay.com
VBT1060C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
TMBS ®
D2PAK (TO-263AB)
K
2
1
VBT1060C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
60 V
IFSM
100 A
VF at IF = 5.0 A
0.50 V
TJ max.
Package
Circuit configurations
150 °C
D2PAK (TO-263AB)
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated
load per diode
Operating junction and storage temperature range
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TSTG
VBT1060C
60
10
5
100
-55 to +150
UNIT
V
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode (1)
Reverse current per diode (2)
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
VR = 60 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF
IR
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TYP.
0.49
0.58
0.39
0.50
-
6.9
MAX.
-
0.70
-
0.60
700
25
UNIT
V
μA
mA
Revision: 21-Jun-2018
1 Document Number: 87971
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VBT1060C-M3 Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
VBT1060C-M3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
VBT1060C
3.5
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
VTB1060C-M3/4W
1.39
TO-263AB
VTB1060C-M3/8W
1.39
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
10
8
6
4
2 Mounted on Specific Heatsink
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
4.0
D = 0.5 D = 0.8
3.5
D = 0.3
3.0
D = 0.2
2.5
2.0 D = 0.1
D = 1.0
1.5 T
1.0
0.5
D = tp/T
tp
0
0123456
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 21-Jun-2018
2 Document Number: 87971
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VBT1060C-M3
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
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