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VBT1060C-M3 Datasheet - Vishay

VBT1060C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VBT1060C-M3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VBT1060C-M3-Vishay.pdf

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Datasheet Details

Part number:

VBT1060C-M3

Manufacturer:

Vishay ↗

File Size:

96.32 KB

Description:

Dual high-voltage trench mos barrier schottky rectifier.

VBT1060C-M3 Distributor

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VBT1060C-M3 VBT1060C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay