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VBT1060C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VBT1060C-M3
Manufacturer Vishay
File Size 96.32 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT1060C-M3 Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com VBT1060C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT1060C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 60 V IFSM 100 A VF at IF = 5.0 A 0.50 V TJ max. Package Circuit configurations 150 °C D2PAK (TO-263AB) Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.