* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
VBT1060C-M3 Datasheet (96.32 KB)
VBT1060C-M3
96.32 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com VBT1060C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A .
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