VBT1060C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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	Vishay Semiconductors	VBT1060C-E3-8W	DIODE ARRAY SCHOT 60V 5A TO263AB	DigiKey	0	8000 units	$0.35	🛒 Buy Now

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Datasheet Details

Part number:

VBT1060C-E3

Manufacturer:

Vishay ↗

File Size:

196.02 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.
VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 www.vishay.com Vishay General Semiconductor Dual.
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A TO-220AB T.

✔ VBT1060C-E3 Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (f

✔ VBT1060C-E3 Application

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC con

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