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VBT1060C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VBT1060C-M3 Description

www.vishay.com VBT1060C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A .

VBT1060C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

VBT1060C-M3 Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial

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Datasheet Details

Part number
VBT1060C-M3
Manufacturer
Vishay ↗
File Size
96.32 KB
Datasheet
VBT1060C-M3-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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