C3M0040120K mosfet equivalent, 1200v 40mohm silicon carbide power mosfet.
Drain (Pin 1, TAB)
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and s.
* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies
* .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 925.26KB)