CGH27030S Datasheet Text
CGH27030S
30 W, DC
- 6.0 GHz, 28 V, GaN HEMT
Description
Wolfspeed’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Tele and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
Package Type: 3x4 DFN PN: CGH27030S
Typical Performance 1.8-2.7 GHz (TC = 25ºC), 28 V
Parameter Small Signal Gain Adjacent Channel Power @ PAVE = 5 W Drain Efficiency @ PAVE = 5 W Input Return Loss
1.8 GHz1 20.0 -39.5 31.8 -4.2
2.0 GHz1 20.4 -42.1 32.8 -6.4
2.2 GHz1 19.5 -39.1 33.8 -7.7
2.3 GHz2 21.1 -32.0 37.8 -7.3
2.5 GHz2 20.6 -36.4 36.2 -7.9
2.7 GHz2 20.0 -33.6 35.0 -7.2
Notes: 1 Measured in the CGH27030S-AMP1 amplifier circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH 2 Measured in the CGH27030S-AMP2 amplifier circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH
Units dB dBc % dB
Features for 28 V in CGH27030S-AMP1
- 1.8
- 2.2 GHz Operation
- 30 W Typical Output Power
- 18 dB Gain at 5 W PAVE
- -39 dBc ACLR at 5 W PAVE
- 33% efficiency at 5 W PAVE
- High degree of APD and DPD correction can be applied
Features for 28 V in CGH27030S-AMP2
- 2.3
- 2.7 GHz Operation
- 30 W Typical Output Power
- 18.5 dB Gain at 5 W PAVE
- -39 dBc ACLR at 5 W PAVE...
