Datasheet Summary
Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490
- 2690 MHz
Description
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It Features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4 PN: GTRA262802FC
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 100 mA, VGS(PEAK) =
- 5.0 V, ƒ = 2635 MHz, 3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
Efficiency
Gain
-10
-30
PAR @ 0.01% CCDF
-50
0 25...