GTRA364002FC
Description
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications.
Key Features
- GaN on SiC HEMT technology
- Input matched
- Asymmetrical Doherty design - Main: P3dB = 170 W Typ - Peak: P3dB = 230 W Typ
- Capable of handling 10:1 VSWR @ 48 V, 50 W (WCDMA) output power
- Pb-free and RoHS pliant
