GTRA412852FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

GTRA412852FC Datasheet Preview — Preview of GTRA412852FC PDF

Datasheet Details

Part number	GTRA412852FC
Manufacturer	Wolfspeed
File Size	960.81 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTRA412852FC-Wolfspeed.pdf

GTRA412852FC Product details

Description

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 144 mA, VGS(PEAK) =.
6.0 V, ƒ = 4100 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Efficiency 20 40 16 Gain 20 12 0 8 -20 4 0 27 PAR @ 0.01% CCDF -40 32 37 42 gtra412852fc-gr1a -60 47 Average Output Power (dBm) Features.

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Published: Jun 25, 2023 |