GTRA412852FC Thermally-Enhanced High Power RF GaN on SiC HEMT

Wolfspeed

Description

GTRA412852FC Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 * 4100 MHz .
The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applicati.

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Datasheet Specifications

Part number: GTRA412852FC
Manufacturer: Wolfspeed
File Size: 960.81 KB
Datasheet: GTRA412852FC-Wolfspeed.pdf
Description: Thermally-Enhanced High Power RF GaN on SiC HEMT

Features

* input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 144 mA, VGS(PEAK) =
* 6.0 V, ƒ = 4100 MHz, 3GPP WCDMA signal, 10 dB

GTRA412852FC Distributors

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GTRA412852FC Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

Wolfspeed GTRA412852FC-like datasheet