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GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT

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Wolfspeed

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GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT by Wolfspeed - Datasheet Preview — Datasheet preview – GTRA360502M

Datasheet Details

Part number	GTRA360502M
Manufacturer	Wolfspeed
File Size	767.59 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTRA360502M Datasheet
Additional preview pages of the GTRA360502M datasheet.

Product details

Description

The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power ampliﬁers. 4.9 V

Features

GaN on SiC HEMT technology.
Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ.
Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain efficiency = 62% @ 50 W.
Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001).
Pb-free and RoHS compliant.
Low thermal resistance isc RF Characteristics d Typical RF Characteristics (tested in Wol.

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Published: Jun 24, 2023 |