GTRA360502M hemt equivalent, thermally-enhanced high power rf gan on sic hemt.
* GaN on SiC HEMT technology
* Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ
* Typical pulsed CW performance, 3600 MHz, 48 V, 10.
from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers
a maximum, average outpu.
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