Datasheet4U Logo Datasheet4U.com

GTRA360502M Datasheet - Wolfspeed

Thermally-Enhanced High Power RF GaN on SiC HEMT

GTRA360502M Features

* GaN on SiC HEMT technology

* Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ

* Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain efficiency = 62% @ 50 W

GTRA360502M General Description

The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers. The device has been designed t for use in communications infrastructure applications from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, avera.

GTRA360502M Datasheet (767.59 KB)

Preview of GTRA360502M PDF

Datasheet Details

Part number:

GTRA360502M

Manufacturer:

Wolfspeed

File Size:

767.59 KB

Description:

Thermally-enhanced high power rf gan on sic hemt.

📁 Related Datasheet

GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTRA374902FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTRA412852FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTR210 Gastransmitter (ADOS)

GTRB204402FC Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)

GTRB206002FC Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)

TAGS

GTRA360502M Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

Image Gallery

GTRA360502M Datasheet Preview Page 2 GTRA360502M Datasheet Preview Page 3

GTRA360502M Distributor