NP60S10D6 mosfet equivalent, 100v n-channel enhancement mode mosfet.
* VDS =100V，ID =60A RDS(ON)(Typ.)=4.6mΩ @VGS=10V RDS(ON)(Typ.)=6.5mΩ @VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on).
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Part Number NP60S10D6-G
Storage Temperature -55°C to +.
Schematic diagram
The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(O.
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