* N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON.

General Features
* N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P.

Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Feature.

NP6661BQR

NP6667SR

NP6601AMR

NP6608D6

NP6608QR

NP6008BSR

NP6008N

NP6020D6-Sn

NP60N03KUG

NP60N03SUG

NP60N04KUG

NP60N04MUG

NP60N04MUK