* N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-10A RDS(ON)=15.3mΩ (typical) @ VGS=-4.5.

General Features
* N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.

Schematic diagram The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Feature.

NP6608D6

NP6601AMR

NP6661BQR

NP6666D6

NP6667SR

NP6008BSR

NP6008N

NP6020D6-Sn

NP60N03KUG

NP60N03SUG

NP60N04KUG

NP60N04MUG

NP60N04MUK