N-channel: VDS =30V,ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel: VDS =-30V,ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.5V
Excellent gate charge x RDS(ON) product(FOM)
Very low on-resistance RDS(ON)
150 °C operating t.