* N-channel： VDS =30V，ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Channel： VDS =-30V，ID =-4A RDS(ON)=54.4mΩ (typical) @ VGS=-4.5V.

General Features
* N-channel： VDS =30V，ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.

Schematic diagram The NP6601AMR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Featur.

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